Structural, Morphological, and Electrical Properties of YMnO3/Si and YMnO3/Y2O3 /Si Bilayer Thin Films by Pulsed Laser Deposition

被引：0

作者：

Onteru, Nirmala ^{[1
]}

Kumar, S. Ajith ^{[2
]}

Reddy, P. Sreedhara ^{[3
]}

Reddy, V. Diwakar ^{[1
]}

机构：

[1] SVU Coll Engn, Dept Mech Engn, Tirupati 57502, AP, India

[2] Sathyabama Inst Sci & Technol, Ctr Nanosci & Nanotechnol, Chennai 600119, Tamil Nadu, India

[3] SV Univ, Dept Phys, Tirupati 517502, AP, India

来源：

THIRD INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS (ICMSS 2020) | 2021年 / 2327卷

关键词：

Multiferroics; Yttrium manganese oxide (YMnO3) thin films; Pulsed laser deposition (PLD); GI-X-ray diffraction; I-V characteristics; FERROELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; EPITAXIAL-GROWTH; MOCVD;

D O I：

10.1063/5.0039574

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multiferroic hexagonal yttrium manganese oxide (YMnO3, SI) and YMnO3/Y2O3 (S2) bilayer thin films were deposited on Si (111) substrate by the pulsed laser deposition technique. The crystal structure of both YMnO3 and YMnO3/Y2O3 bilayer thin films was studied using grazing incidence X-ray diffraction (GI-XRD). The surface morphology and elemental analysis of as-grown thin films were investigated by field emission scanning electron microscope (FESEM) attached with energy dispersive x-ray spectroscopy (EDS). The room temperature electrical properties, leakage current versus voltage (I-V) characteristics were investigated. The XRD studies revealed that the single and bilayer YMnO3 thin films are polycrystalline and preferred oriented (004,110, and 214) hexagonal YMnO3 structure. The leakage current density of Si and S2 thin films is measured to be 1.15x10(-4) and 1.01x10(-4) A/cm(2) at +5V, respectively.

引用

页数：7

共 50 条

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