Quantum Hall effect in bilayer graphene: Disorder effect and quantum phase transition

被引:20
|
作者
Ma, R. [1 ,2 ]
Sheng, L. [3 ,4 ]
Shen, R. [1 ,3 ,4 ]
Liu, M. [2 ]
Sheng, D. N. [1 ]
机构
[1] Calif State Univ Northridge, Dept Phys & Astron, Northridge, CA 91330 USA
[2] Southeast Univ, Dept Phys, Nanjing 210096, Peoples R China
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
关键词
LANDAU-LEVEL; BERRYS PHASE; GRAPHITE; SYSTEMS;
D O I
10.1103/PhysRevB.80.205101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We numerically study the quantum Hall effect (QHE) in bilayer graphene based on tight-binding model in the presence of disorder. Two distinct QHE regimes are identified in the full energy band separated by a critical region with nonquantized Hall Effect. The Hall conductivity around the band center (Dirac point) shows an anomalous quantization proportional to the valley degeneracy, but the nu=0 plateau is markedly absent, which is in agreement with experimental observation. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center and higher plateaus disappear first. The central two plateaus around the band center are most robust against disorder scattering, which is separated by a small critical region in between near the Dirac point. The longitudinal conductance around the Dirac point is shown to be nearly a constant in a range of disorder strength, until the last two QHE plateaus completely collapse.
引用
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页数:5
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