n-ZnSe/p-GaAs heterojunction solar cells

被引：1

作者：

Blieske, U ^{[1
]}

Kampschulte, T ^{[1
]}

Bauknecht, A ^{[1
]}

Saad, M ^{[1
]}

Sollner, J ^{[1
]}

Krost, A ^{[1
]}

Schatke, K ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Dep FH, D-14109 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654242

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

For PV applications epitaxial layers of n-ZnSe were grown by metal-organic vapour phase epitaxy (MOVPE) at 340 degrees C on GaAs(001) substrates. n-type net carrier concentration in the range between 10(17)-10(19) cm(-3) was demonstrated. By increasing the doping concentration the double crystal x-ray diffraction full width at half maximum of 1.2 mu m thick ZnSe-layers increased from 400 " to 600 ". A first n-ZnSe/p-GaAs solar cell achieved an open circuit voltage of 706 mV, a fill factor of 65% and a short circuit current density of 10mAcm(-2) (total area, ELH-lamp, 100mWcm(-2), no AR-coating). J(sc) was increased by 4mAcm(-2) by depositing sputtered n(+)-ZnO on the n-ZnSe layer. In order to further improve the PV performance n-ZnSe will be grown on GaAs buffer layers, the doping profile will be optimised systematically and MgF2 will be deposited on the ZnO layer.

引用

页码：939 / 942

页数：4

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