Structural and electronic properties of Bi2Se3 topological insulator thin films grown by pulsed laser deposition

被引：46

作者：

Orgiani, P. ^{[1
,2
]}

Bigi, C. ^{[2
,3
]}

Das, P. Kumar ^{[2
,4
]}

Fujii, J. ^{[2
]}

Ciancio, R. ^{[2
]}

Gobaut, B. ^{[5
]}

Galdi, A. ^{[1
,6
]}

Sacco, C. ^{[1
,7
]}

Maritato, L. ^{[1
,7
]}

Torelli, P. ^{[2
]}

Panaccione, G. ^{[2
]}

Vobornik, I. ^{[2
]}

Rossi, G. ^{[2
,3
]}

机构：

[1] CNR, SPIN, UOS Salerno, I-84084 Fisciano, Italy

[2] CNR, IOM, TASC Lab, Area Sci Pk, I-34139 Trieste, Italy

[3] Univ Milan, Dept Phys, I-20133 Milan, Italy

[4] Abdus Salaam Int Ctr Theoret Phys, I-34151 Trieste, Italy

[5] Elettra Sincrotrone Trieste, I-34139 Trieste, Italy

[6] Univ Salerno, Dept Informat & Elect Engn & Appl Math, I-84084 Fisciano, Italy

[7] Univ Salerno, Dept Ind Engn, I-84084 Fisciano, Italy

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 17期

关键词：

SINGLE DIRAC CONE; SURFACE; TEXTURE;

D O I：

10.1063/1.4982207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on epitaxial growth of Bi2Se3 topological insulator thin films by Pulsed Laser Deposition (PLD). X-ray diffraction investigation confirms that Bi2Se3 with a single (001)-orientation can be obtained on several substrates in a narrow (i.e., 20 degrees C) range of deposition temperatures and at high deposition pressure (i.e., 0.1 mbar). However, only films grown on (001)-Al2O3 substrates show an almost-unique in-plane orientation. In-situ spin-resolved angular resolved photoemission spectroscopy experiments, performed at the NFFA-APE facility of IOM-CNR and Elettra (Trieste), show a single Dirac cone with the Dirac point at E-B similar to 0.38 eV located in the center of the Brillouin zone and the spin polarization of the topological surface states. These results demonstrate that the topological surface state can be obtained in PLD-grown Bi2Se3 thin films. Published by AIP Publishing.

引用

页数：5

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