OPTIMIZATION OF FLICKER NOISE IN ENG APPLICATION

被引：0

作者：

Vejdani, Parisa ^{[1
]}

Ashtiani, Shahin ^{[1
]}

Kamarei, Mahmoud ^{[1
]}

机构：

[1] Univ Tehran, Fac Engn, Sch Elect & Comp Engn, Tehran, Iran

来源：

AEE '10: PROCEEDINGS OF THE 9TH WSEAS INTERNATIONAL CONFERENCE ON APPLICATIONS OF ELECTRICAL ENGINEERING | 2010年

关键词：

neural recording amplifier; low noise design; flicker noise; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Since the electroneurogram signal measured from cuff electrodes is typically on the order of 100 mu V, a very low-noise interface is essential. This paper describes input noise of fully differential amplifier as a function of area and current, and extracts the minimum noise for a constant total area and current. Thermal noise and flicker noise of both input transistor and load transistor are separately extracted. Therefore, with minimum value of current and area specific noise levels are extracted. A Comparison between noise of fully differential amplifier with nmos-input and pmos-input is also performed.

引用

页码：239 / +

页数：2

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