Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating

被引：13

作者：

Congar, Antoine ^{[1
]}

Gay, Mathilde ^{[1
]}

Perin, Georges ^{[1
]}

Mammez, Dominique ^{[1
]}

Simon, Jean-Claude ^{[1
]}

Besnard, Pascal ^{[1
]}

Rouvillain, Julien ^{[2
]}

Georges, Thierry ^{[2
]}

Lablonde, Laurent ^{[3
]}

Robin, Thierry ^{[3
]}

Trebaol, Stephane ^{[1
]}

机构：

[1] Univ Rennes, CNRS, Inst FOTON, UMR 6082, F-22305 Lannion, France

[2] Oxxius, 4 Rue Louis Broglie, F-22300 Lannion, France

[3] iXblue, Rue Paul Sabatier, F-22300 Lannion, France

来源：

OPTICS LETTERS | 2021年 / 46卷 / 05期

关键词：

SEMICONDUCTOR-LASER; WAVELENGTH; NOISE;

D O I：

10.1364/OL.409789

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We realize a fiber Bragg grating InGaN-based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrowband fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode suppression ratio and mW output power. Detailed frequency noise analysis reveals subMHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed. (C) 2021 Optical Society of America

引用

页码：1077 / 1080

页数：4

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