Development of High Efficiency and Power Density Converter using SiC MOSFET for xEV

被引:1
|
作者
Kim, Jae-Won [1 ]
Noh, Yong-Su [1 ]
Joo, Dongmyoung [1 ]
Hwang, Dae Yeon [1 ]
Kim, Jin-Hong [1 ]
Choi, Jun-Hyuk [1 ]
机构
[1] Korea Elect Technol Inst KETI, Intelligent Mechatron Res Ctr, Bucheon, South Korea
关键词
Wide-bandgap; high efficiency; high power density; development; xEV; LLC RESONANT CONVERTER; DESIGN;
D O I
10.23919/ICEMS52562.2021.9634326
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of 50kW converter system using SiC MOSFET is proposed in this paper. SiC MOSFET can operate with lower conduction losses and switching losses, compared with conventional silicon-based MOSFETs. The 50kW battery charger consists of two 25kW AC/DC modular converters and four 12.5kW DC/DC LLC converters. The implementation of SiC MOSFET enables to design AC/DC converters and LLC converters with high-efficiency and high-power density. The performance of proposed converters is validated through simulations and experimental results. The maximum efficiency of AC/DC and DC/DC converter are 99% and 97.9% respectively.
引用
收藏
页码:2132 / 2137
页数:6
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