Finite element thermal modelling of power MOSFET packages

被引:1
|
作者
Cioban, R. [1 ,2 ]
Szoke, Sz. [3 ]
Zaharie-B, D. [2 ]
Koradi, Z. [3 ]
Leordean, C. [2 ]
Simon, S. [1 ]
机构
[1] Babes Bolyai Univ, Fac Phys, 1 Kogalniceanu Mihail, Cluj Napoca 400084, Romania
[2] Robert Bosch Srl, Engn Ctr Cluj, 1 Robert Bosch, Jucu 407352, Romania
[3] Robert Bosch Kft, Engn Ctr Budapest, 104 Gyomro, H-1103 Budapest, Hungary
关键词
Thermal modelling; MOSFET packages; Electronics; FEM; Automation;
D O I
10.1016/j.microrel.2022.114629
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a methodology for complete thermal description of power MOSFETs (LFPak56 and LFPak56D) to be used in electronic assembly level simulations. By describing all relevant heat paths through the packages, various types of cooling solutions can be assessed from early development phases. The described modelling approach comprises of measurement and calibration of the three paths through the package: via the slug, pins, and mold, by tuning each material property, to fit the thermal transient response (Z(th)). The automated calibration of all three heat paths of the MOSFETs described in the paper, greatly simplifies, and streamlines the buildup of the models lowering both development times and costs. The novelty of the paper is the introduction of concurrent calibration of all three paths with the help of optimization software and the measurement and model setups for an improved workflow. Using the described methods, standardized models can be built for quick assessments of different hardware configurations and thermal designs of electronic control units. The high ac-curacy of these models makes them appropriate for describing complex high-power transient loads and fast switching times.
引用
收藏
页数:9
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