Theory of electric-field-induced metal-insulator transition in doped manganites

被引：32
|
作者：
Gu, RY [1 ]
Wang, ZD
Ting, CS
机构：
[1] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[2] Univ Houston, Dept Phys, Houston, TX 77204 USA
[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.67.153101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The insulator to metal transition (IMT) induced by the application of an electric field in doped manganites is investigated theoretically. Starting from the double-exchange mechanism with the long-range Coulomb interaction included, we find that the electric field may suppress the charge ordering and drive the system from the antiferromagnetic and charge-ordered state with an energy gap at the Fermi level to the ferromagnetic and gapless state, resulting in the IMT. A numerical simulation is performed for manganite films with intrinsic inhomogeneities, and an important impact of the inhomogeneities on this electric-field-induced transition is obtained. Our results can naturally account for the recently observed electric-filed-induced IMT phenomenon in manganites.
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页数：4
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