Orientation dependent growth of TmAs wires in GaAs grown by MBE

被引：0
|
作者：
Wright, AC
Bennett, MR
Singer, KE
机构：
[1] NEWI Plas Coch, Adv Mat Res Lab, Wrexham LL11 2AW, Wales
[2] UMIST, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England
[3] UMIST, Ctr Elect Mat, Manchester M60 1QD, Lancs, England
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期
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中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Thulium doped gallium arsenide has been grown by Molecular Beam Epitaxy (MBE) on both (100), (311)B and (111)A oriented GaAs substrates. Above the solubility limit for Tm in GaAs, free precipitation of TmAs occurs and this can be either as dots, wires or bifurcated trees, depending on growth conditions. We show that the substrate orientation has a marked effect on the form of the precipitates and provides a means to control the microstructure of TmAs in its wire-like form.
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页码：385 / 388
页数：4
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