Investigation of high performance TiO2 nanorod array perovskite solar cells

被引:67
|
作者
Liu, Changwen [1 ]
Zhu, Ruixue [2 ]
Ng, Annie [1 ]
Ren, Zhiwei [1 ]
Cheung, Sin Hang [3 ]
Du, Lili [2 ]
So, Shu Kong [3 ]
Zapien, Juan Antonio [4 ]
Djurisic, Aleksandra B. [5 ]
Phillips, David Lee [2 ]
Surya, Charles [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Chem, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Baptist Univ, Dept Pediat, Hong Kong, Hong Kong, Peoples R China
[4] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[5] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
关键词
MIXED-HALIDE PEROVSKITE; HYDROGENATED AMORPHOUS-SILICON; HOLE-TRANSPORT; PHOTOCURRENT SPECTROSCOPY; PHOTOVOLTAIC PERFORMANCE; DEFECT STATES; BASE ADDUCT; EFFICIENCY; GROWTH; ABSORPTION;
D O I
10.1039/c7ta03710d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper, systematic investigations on the fabrication and characterization of high performance TiO2 nanorod array perovskite solar cells (NAPSCs) are reported. The TiO2 nanorods, of length around 350-400 nm, were grown by solvothermal technique directly on glass/FTO substrates. From the scanning transmission electron microscopy (STEM) we demonstrate that excellent crystallinity for the TiO2 nanorods can be produced using the solvothermal technique. Precursor consisting of a mixture of PbI2, CH3NH3I (MAI) and CH3NH3Cl (MACl) was used for the growth of perovskite thin films on the glass/FTO/ TiO2 nanorod array (TiO2-NA) substrates. It is found that the morphology and quality of the perovskite layer depend strongly on the concentration of MACl in the precursor. Experimental studies on femtosecond transient absorption (fs-TA) indicate that the incorporation of TiO2-NA greatly enhances the collection efficiency of the photo-generated carriers due to substantial increase of interfacial area between the perovskite and TiO2-NA, leading to a reduction in carrier diffusion distance. It is shown to be the key factor that the proposed technique facilitates the use of a thicker perovskite absorber layer (similar to 500 nm) without compromising on the series resistance. Detailed J-V characterization shows that the NAPSCs exhibit negligible hysteresis with a power conversion efficiency (PCE) >19% for the champion device.
引用
收藏
页码:15970 / 15980
页数:11
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