Experimental evidence of the oxygen dimer in silicon

被引：114

作者：

Murin, LI ^{[1
]}

Hallberg, T

Markevich, VP

Lindstrom, JL

机构：

[1] Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.80.93

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical characterization of the oxygen dimer in silicon has been performed for the first time. The vibrational IR absorption bands at 1012, 1060, and 1105 cm(-1) are shown to arise from this complex. Using heat-treatment studies, the dimer binding energy is determined to be about 0.3 eV. Indications of the high migration ability of the dimer predicted earlier are found as well.

引用

页码：93 / 96

页数：4

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