Magnetic control of valley and spin degrees of freedom via magnetotransport in n-type monolayer MoS2

被引:11
|
作者
Zhou, Xiaoying
Liu, Yiman
Zhou, Ma
Tang, Dongsheng
Zhou, Guanghui [1 ]
机构
[1] Hunan Normal Univ, Minist Educ, Dept Phys, Changsha 410081, Hunan, Peoples R China
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
MoS2; monolayer; magnetotransport; Hall conductance; spin-(valley-)polarization; POLARIZATION; TRANSITION;
D O I
10.1088/0953-8984/26/48/485008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the quantum magnetotransport properties at low temperature for n-type monolayer MoS2 under a perpendicular magnetic field within the linear response theory. By using Kubo formula, it is predicted that the valley-and spin-resolved Hall conductance obeys the same rule as that for conventional fermions. However, the first Hall plateau and the longitudinal charge conductance in low energies are fully valley/spin-polarized, which may produce a pure valley/spin current. In the low magnetic field limit, importantly, the resistance as a function of field is in good agreement with the available experiment data. These interesting findings can be tested experimentally and may be useful for valleytronic and spintronic applications.
引用
收藏
页数:6
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