3D Heterogeneous Opto-Electronic Integration Technology for System-on-Silicon (SOS)

被引：0

作者：

Lee, K-W ^{[1
]}

Noriki, A. ^{[1
]}

Kiyoyama, K. ^{[1
]}

Kanno, S. ^{[1
]}

Kobayashi, R. ^{[1
]}

Jeong, W-C ^{[1
]}

Bea, J-C ^{[1
]}

Fukushima, T. ^{[1
]}

Tanaka, T. ^{[1
]}

Koyanagi, M. ^{[1
]}

机构：

[1] Tohoku Univ, Dept Bioengn & Robot, Sendai, Miyagi 9808579, Japan

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS). In order to realize 3D opto-electronic integrated system-on-silicon (SOS), we developed novel heterogeneous integration technology of LSI, MEMS and optoelectronic devices by implementing 3D heterogeneous opto-electronic multi-chip module composed with LSI, passives, MEMS and optoelectronic devices. The electrical interposer mounted with amplitude shift keying (ASK) LSI, LC filter and pressure-sensing MEMS chips and the optical interposer embedded with vertical-cavity surface-emitting laser (VCSEL) and photodiode (PD) chips are precisely bonded to form 3D opto-electronic multi-chip module. Opto-electronic devices are electrically connected via through-silicon vias (TSVs) which were formed into the interposers. Micro-fluidic channels are formed into the interposer by wafer direct bonding technique. 3D heterogeneous opto-electronic multi-chip module is successfully implemented for the first time.

引用

页码：495 / 498

页数：4

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