user

Room temperature λ ∼ 3.3 μm InP-based InGaAs/AlAs(Sb) quantum cascade lasers

被引：6
|
作者：
Zhang, S. Y. [1 ]
Revin, D. G. [2 ]
Commin, J. P. [2 ]
Kennedy, K. [1 ]
Krysa, A. B. [1 ]
Cockburn, J. W. [2 ]
机构：
[1] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 06期
关键词：
D O I：
10.1049/el.2010.0202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room temperature strain-compensated In(0.7)Ga(0.3)As/AlAs(Sb)/InP quantum cascade lasers operating at lambda similar to 3.3 mu m are reported. 20 mm wide- and 1.5 mm-long devices with as-cleaved facets deliver more than 1 W peak optical power per facet at 300 K. A detailed comparison of the device characteristics for the lasers fabricated from various parts of the 2-inch wafer has been performed.
引用
收藏
页码：439 / U84
页数：2
相关论文
共 50 条
  • [1] λ∼3.1 μm room temperature InGaAs/AlAsSb/InP quantum cascade lasers
    Zhang, S. Y.
    Revin, D. G.
    Cockburn, J. W.
    Kennedy, K.
    Krysa, A. B.
    Hopkinson, M.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (03)
  • [2] λ∼3.36 μm room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating
    Commin, J. P.
    Kennedy, K.
    Revin, D. G.
    Zhang, S. Y.
    Krysa, A. B.
    Cockburn, J. W.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (11)
  • [3] High performance, high temperature λ≈3.7 μm InGaAs/AlAs(Sb) quantum cascade lasers
    Commin, J. P.
    Revin, D. G.
    Zhang, S. Y.
    Krysa, A. B.
    Cockburn, J. W.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (11)
  • [4] High-Peak-Power Room-Temperature λ ∼ 3.6 μm InGaAs-AlAs(Sb) Quantum Cascade Lasers
    Revin, Dmitry G.
    Zhang, Shiyong
    Commin, James Paul
    Kennedy, Kenneth
    Krysa, Andrey B.
    Cockburn, John W.
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (11) : 757 - 759
  • [5] Room-temperature AlInAs/InGaAs/InP quantum cascade lasers
    Gutowski, Piotr
    Karbownik, Piotr
    Trajnerowicz, Artur
    Pierscinski, Kamil
    Pierscinska, Dorota
    Sankowska, Iwona
    Kubacka-Traczyk, Justyna
    Sakowicz, Maciej
    Bugajski, Maciej
    [J]. PHOTONICS LETTERS OF POLAND, 2014, 6 (04) : 142 - 144
  • [6] High peak power λ∼3.3 and 3.5 μm InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K
    Commin, J. P.
    Revin, D. G.
    Zhang, S. Y.
    Krysa, A. B.
    Kennedy, K.
    Cockburn, J. W.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (03)
  • [7] High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers
    Bandyopadhyay, N.
    Slivken, S.
    Bai, Y.
    Razeghi, M.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (21)
  • [8] Room temperature CW operation of (λ∼9μm) InP based quantum cascade lasers
    Forget, S
    Faugeras, C
    Duchemin, EB
    Bengloan, JY
    Sirtori, C
    Calligaro, M
    Parillaud, O
    Page, H
    Giovannini, M
    Faist, J
    [J]. SOLID STATE LASER TECHNOLOGIES AND FEMTOSECOND PHENOMENA, 2004, 5620 : 101 - 111
  • [9] InP-Based Midinfrared Quantum Cascade Lasers for Wavelengths Below 4 μm
    Revin, Dmitry G.
    Commin, James Paul
    Zhang, Shiyong Y.
    Krysa, Andrey B.
    Kennedy, Kenneth
    Cockburn, John W.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (05) : 1417 - 1425
  • [10] High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si
    Slivken, Steven
    Razeghi, Manijeh
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2022, 58 (06)
12345