Exciton spin relaxation in diluted magnetic semiconductor Zn1-xMnxSe/CdSe superlattices:: Effect of spin splitting and role of longitudinal optical phonons -: art. no. 125313

被引：31

作者：

Chen, WM ^{[1
]}

Buyanova, IA

Rudko, GY

Mal'shukov, AG

Chao, KA

Toropov, AA

Terent'ev, Y

Sorokin, SV

Lebedev, AV

Ivanov, SV

Kop'ev, PS

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Russian Acad Sci, Inst Spect, Moscow 142190, Russia

[3] Lund Univ, Dept Phys, S-22362 Lund, Sweden

[4] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.67.125313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton spin relaxation in diluted magnetic semiconductor (DMS) structures based on ZnMnSe is closely examined as a function of exciton spin splitting in an external magnetic field. A drastic increase in spin relaxation is observed when exciton spin splitting exceeds the longitudinal optical (LO) phonon energy. Direct experimental evidence has been provided from (1) spin injection from the DMS to an adjacent nonmagnetic quantum well that can be modulated by the LO-assisted spin relaxation and (2) hot exciton photoluminescence within the DMS where a spin flip is accompanied by the emission of one LO phonon.

引用

页数：7

共 15 条

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PHYSICAL REVIEW B, 2001, 63 (21):
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PHYSICAL REVIEW B, 2004, 70 (19) : 1 - 4
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PHYSICAL REVIEW B, 2004, 69 (12)

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