Surface Modification and Activation with Gas Cluster Ion Beam

被引：0
|
作者：
Sasaki, Tomoya [1 ]
Toyoda, Noriaki [1 ]
Yamada, Isao [1 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo, Japan
来源：
2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) | 2016年
关键词：
wafer bonding; GCIB; SAB; Cu;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. Cu-Cu bonding did not succeced without GCIB irradiation or with 5 kV Ar-GCIB irradiation. On the country, Cu-Cu bondings were realized with 10 or 20 kVAr-GCIB irradiations owing to surface oxide removal.
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页数：3
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