Effects of p(O2) and p(CO2) on epitaxial growth of BaTiO3 thin films on MgO(100) substrates by using metal organic acid salts

BaTiO3 thin films were prepared by using metal organic acid salts on MgO(100) substrates, which have large lattice-misfit with BaTiO3. Amorphous films prefired at 470 degrees C were crystallized to BaTiO3 phase by heat treatment at higher temperature. Crystallinity and in-plane alignment of the prepared films were found to depend on the heat-treatment conditions. BaTiO3 films with high cystallinity but poor (100)-orientation were obtained in air at higher than 1200 degrees C. Whereas, (100)-oriented epitaxial BaTiO3 film was fabricated by annealing at 900 degrees C under low oxygen partial pressure (p(O-2)). Low carbon dioxide partial pressure (p(CO2)) is also found to be essential for preparation of epitaxial BaTiO3 films on MgO substrates by using metal organic acid salts. (C) 1997 Elsevier Science S.A.