A germanium back contact type thermophotovoltaic cell

被引：0

作者：

Nagashima, Tomonori

Okumura, Kenichi

Yamaguchi, Masafumi

机构：

[1] Toyota Motor Co Ltd, Future Project Div, Shizuoka 4101193, Japan

[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

来源：

THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY | 2007年 / 890卷

关键词：

germanium; back contact passivation; quantum efficiency;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A Ge back contact type photovoltaic cell has been proposed to reduce resistance loss for high current densities in thermophotovoltaic systems. The back contact structure requires less surface recombination velocities than conventional structures with front grid contacts. A SiO2/SiNx double anti-reflection coating including a high refractive index SiNx layer was studied. The SiNx layer has an enough passivation effect to obtain high efficiency. The quantum efficiency of the Ge cell was around 0.8 in the 800-1600 nm wavelength range. The conversion efficiency for infrared lights was estimated at 18% for a blackbody surface and 25% for a selective emitter by using the quantum efficiency and a simulation analysis.

引用

页码：174 / 181

页数：8

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