Femtosecond laser-induced nanostructuring and phase transformation of crystalline silicon

被引:6
|
作者
Reif, J [1 ]
Costache, F [1 ]
Kouteva-Arguirova, S [1 ]
机构
[1] Brandenburg Tech Univ Cottbus & Joint Lab, LS Expt Phys 2, IHP, D-03044 Cottbus, Germany
来源
关键词
femtosecond laser processing; silicon; ripples; self-assembly of nanostructures; crystalline phases; Raman spectroscopy;
D O I
10.1117/12.548826
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Surface morphology and structural changes upon femtosecond laser ablation from crystalline silicon (001)were examined ex-situ by optical, scanning electron, and atomic force microscopy, as well as Raman spectroscopy. After repetitive illumination with several thousand laser pulses at an intensities below or near the single shot damage threshold (2x10(12) W/cm(2)), self-assembled periodic nanostructures; with periods of 200 nm resp. 600-700 nm develop at the crater bottom. Micro-Raman spectroscopy reveals phase transformations inside the crater from Si-I to the polymorphs Si-III, Si-XII, hexagonal Si-wurtzite (Si-IV), and amorphous silicon, pointing to substantial pressure and volume changes during the interaction. The ablation dynamics was monitored by time-of-flight mass spectroscopy, showing the emission of superthermal positive ions with a kinetic energy of several eV as well as significant contributions at lower kinetic energies. The results suggest that the ablation is associated with considerable recoil pressure and leaves behind a severely perturbed crystal surface. The resulting instability relaxes by a self-organization, independent of the initial, and surrounding, crystal structure.
引用
收藏
页码:756 / 764
页数:9
相关论文
共 50 条
  • [1] Observation of femtosecond laser-induced ablation in crystalline silicon
    Choi, TY
    Grigoropoulos, CP
    [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2004, 126 (05): : 723 - 726
  • [2] A femtosecond laser-induced periodical surface structure on crystalline silicon
    Tan, B
    Venkatakrishnan, K
    [J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (05) : 1080 - 1085
  • [3] THEORY FOR THE LASER-INDUCED FEMTOSECOND PHASE-TRANSITION OF SILICON AND GAAS
    STAMPFLI, P
    BENNEMANN, KH
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (02): : 191 - 196
  • [4] Femtosecond laser-induced formation of spikes on silicon
    Her, TH
    Finlay, RJ
    Wu, C
    Mazur, E
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (04): : 383 - 385
  • [5] Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses
    Tran, DV
    Zheng, HY
    Lam, YC
    Murukeshan, VM
    Chai, JC
    Hardt, DE
    [J]. OPTICS AND LASERS IN ENGINEERING, 2005, 43 (09) : 977 - 986
  • [6] Femtosecond laser-induced formation of spikes on silicon
    T.-H. Her
    R.J. Finlay
    C. Wu
    E. Mazur
    [J]. Applied Physics A, 2000, 70 : 383 - 385
  • [7] Comparative experimental study of laser-induced transitions in crystalline silicon by femtosecond, picosecond, and millisecond laser ablation
    Yang, Chengjuan
    Mei, Xuesong
    Wang, Wenjun
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2014, 169 (03): : 194 - 203
  • [8] Femtosecond laser-induced periodic surface nanostructuring of sputtered platinum thin films
    Rodriguez, Ainara
    Carmen Morant-Minana, Maria
    Dias-Ponte, Antonio
    Martinez-Calderon, Miguel
    Gomez-Aranzadi, Mikel
    Olaizola, Santiago M.
    [J]. APPLIED SURFACE SCIENCE, 2015, 351 : 135 - 139
  • [9] Impact of wavelength, intensity and polarization on the morphology of femtosecond laser-induced structures on crystalline silicon surface
    A. Karlash
    A. Dmytruk
    I. Dmitruk
    N. Berezovska
    Ye. Hrabovskyi
    I. Blonskyi
    [J]. Applied Nanoscience, 2022, 12 : 1191 - 1199
  • [10] Impact of wavelength, intensity and polarization on the morphology of femtosecond laser-induced structures on crystalline silicon surface
    Karlash, A.
    Dmytruk, A.
    Dmitruk, I
    Berezovska, N.
    Hrabovskyi, Ye
    Blonskyi, I
    [J]. APPLIED NANOSCIENCE, 2022, 12 (04) : 1191 - 1199