Non-universality of scaling exponents in quantum Hall transitions

被引:10
|
作者
Dodoo-Amoo, N. A. [1 ]
Saeed, K. [1 ]
Mistry, D. [1 ]
Khanna, S. P. [1 ]
Li, L. [1 ]
Linfield, E. H. [1 ]
Davies, A. G. [1 ]
Cunningham, J. E. [1 ]
机构
[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
quantum Hall effect; localization; scaling; SILICON INVERSION-LAYERS; DEGENERATE LANDAU-LEVELS; LOW-TEMPERATURES; ALXGA1-XAS/GAAS HETEROSTRUCTURES; POTENTIAL FLUCTUATIONS; LOCALIZATION LENGTH; ELECTRONIC STATES; PHASE-TRANSITIONS; MAGNETIC-FIELDS; DIMENSIONS;
D O I
10.1088/0953-8984/26/47/475801
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated experimentally the scaling behaviour of quantum Hall transitions in GaAs/AlGaAs heterostructures of a range of mobility, carrier concentration, and spacer layer width. All three critical scaling exponents gamma, kappa and p were determined independently for each sample. We measure the localization length exponent to be gamma approximate to 2.3, in good agreement with expected predictions from scaling theory, but. and p are found to possess non-universal values. Results obtained for kappa range from kappa = 0.16 +/- 0.02 to kappa = 0.67 +/- 0.02, and are found to be Landau level (LL) dependent, whereasp is found to decrease with increasing sample mobility. Our results demonstrate the existence of two transport regimes in the LL conductivity peak; universality is found within the quantum coherent transport regime present in the tails of the conductivity peak, but is absent within the classical transport regime found close to the critical point at the centre of the conductivity peak. We explain these results using a percolation model and show that the critical scaling exponent depends on certain important length scales that correspond to the microscopic description of electron transport in the bulk of a two-dimensional electron system.
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页数:13
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