The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

被引：7
|
作者：
Karirinne, S [1 ]
Pavelescu, EM [1 ]
Konttinen, J [1 ]
Jouhti, T [1 ]
Pessa, M [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
NEW JOURNAL OF PHYSICS | 2004年 / 6卷
关键词：
D O I：
10.1088/1367-2630/6/1/192
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Our experiments show that photoluminescence spectra from dilute nitride Ga1-x In-x NyAs1-y/GaAs (y < 2%) quantum wells (QW) are independent of growth temperature of the QWs in the range from 430 to 470&DEG;C. Spectral blue shift upon annealing is large for the low-temperature QW (430&DEG;C), and emission intensity is more enhanced than that of the high-temperature QW (470&DEG;C). Raman scattering reveals that the 430&DEG;C QW contains more In - N bonds than does the 470&DEG;C QW. It seems, therefore, that the blue shift, which is proportional to a number of In - N bonds, originates from the presence of point-like defects of the alloy. Lower emission intensity from the annealed 470&DEG;C sample may be attributed to more pronounced alloy fluctuations and interface roughening, seen in cross-sectional transmission electron micrographs.
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页码：1 / 8
页数：8
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