The properties of Cu films deposited by high rate magnetron sputtering from a liquid target

The focus of the paper is Cu films obtained by magnetron sputtering a liquid target at an average power density not exceeding 45 W/cm(2). The deposition rates reached 140 nm/s. In the film formation, the pulsed power supplies of two types have been used. The discharge has functioned in an Ar atmosphere and in self-sustained mode. Structural and electrically conductive properties of the films have been analyzed. A comparison was made with those deposited by sputtering a cooled target with similar power. It has revealed that the evaporation of the magnetron target plays a dominant role in the formation of the structural and conductive properties of Cu films. The Cu films deposited by sputtering evaporative liquid targets have a lower electrical resistance than the films of similar thickness obtained by sputtering cooled targets. The mode of self-sustained sputtering does not significantly affect the structural properties of the films as compared with sputtering in the Ar atmosphere, but the electrical resistivity is approximately 20% lower. Due to high deposition rate in the case with evaporative targets the heating of the substrate when producing films of equal thicknegs turns out to be less than when using a magnetron with a cooled target.