Nonspecular x-ray-reflectivity study of partially correlated interface roughness of a Mo/Si multilayer

被引:18
|
作者
Lee, DR [1 ]
Park, YJ
Kim, D
Jeong, YH
Lee, KB
机构
[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 15期
关键词
D O I
10.1103/PhysRevB.57.8786
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nonspecular x-ray-reflectivity intensities were measured to characterize the interface morphology of a Mo/Si multilayer. Longitudinal off-specular scans and transverse scans at several multilayer peaks and valleys were carried out. For the analysis of the experimental data, a height cross-correlation function between different interfaces was derived for a model multilayer whose interfaces are partially correlated. The parameters related to the interface morphology were obtained by fitting the measured intensities within the distorted-wave Born approximation. The intermixing widths of the graded interfaces, the correlated interface roughness amplitude, and a vertical correlation length were obtained by analyzing the off-specular intensities. [S0163-1829(98)04615-3].
引用
收藏
页码:8786 / 8789
页数:4
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