Effects of periodic delta-doping on the properties of GaN:Si films grown on Si(111) substrates

In this study, the effects of periodic Si delta-doping on the morphological and optical properties of GaN films grown on Si (111) substrate have been investigated. It is found that the flow rate of Si dopant during growth significantly affects the surface morphology, structural and optical quality of GaN. Compared to undoped GaN on Si(111), films grown using periodic delta-doping show a significant reduction of the in plane tensile stress, which is confirmed by the blueshift of the E-2(TO) phonon and band edge photoluminescence peaks. The crack density in GaN films also reduces due to delta-doping. (C) 2004 American Institute of Physics.