Structural and galvanomagnetic properties of CuInS2 films

Thin copper-indium-disulphide films were prepared by thermal evaporation technique. X-ray diffraction analysis of the compound used for evaporation showed a tetragonal polycrystalline structure. Differential Thermal Analysis (DTA) of this compound showed two exothermic peaks at 585 and 632 degrees C. Thin films with thicknesses of 0.14 and 0.27 nm have a deposition rate 10 nm/min, while those with thicknesses of 0.54 and 0.56 nm have a deposition rate 48 nm/min. The obtained films have polycrystalline structure as shown from the electron diffraction study. A growth process was detected in the films by transmission electron microscopy as the film thickness increases. The surface topography was revealed by scanning electron microscopy. The variations of Hall mobility and carrier concentration with magnetic induction were studied. The resistivity-temperature relationship was investigated, from which the activation energies before and after annealing were found to be 0.2, 0.3 and 0.055 eV, respectively.