Influence of the Defect Stability on n-Type Conductivity in Electron-Doped α- and β-Co(OH)2 Nanosheets

Electronic doping of transition-metal oxides (TMOs) is typically accomplished through the synthesis of nonstoichiometric oxide compositions and the subsequent ionization of intrinsic lattice defects. As a result, ambipolar doping of wide-band-gap TMOs is difficult to achieve because the formation energies and stabilities of vacancy and interstitial defects vary widely as a function of the oxide composition and crystal structure. The facile formation of lattice defects for one carrier type is frequently paired with the high-energy and unstable generation of defects required for the opposite carrier polarity. Previous work from our group showed that the brucite (beta-phase) layered metal hydroxides of Co and Ni, intrinsically p-type materials in their anhydrous three-dimensional forms, could be n-doped using a strong chemical reductant. In this work, we extend the electron-doping study to the alpha polymorph of Co(OH)(2) and elucidate the defects responsible for n-type doping in these two-dimensional materials. Through structural and electronic comparisons between the alpha, beta, and rock-salt structures within the cobalt (hydr)oxide family of materials, we show that both layered structures exhibit facile formation of anion vacancies, the necessary defect for n-type doping, that are not accessible in the cubic CoO structure. However, the brucite polymorph is much more stable to reductive decomposition in the presence of doped electrons because of its tighter layer-to-layer stacking and octahedral coordination geometry, which results in a maximum conductivity of 10(-4) S/cm, 2 orders of magnitude higher than the maximum value attainable on the alpha-Co(OH)(2) structure.