Electrophysical Properties of Polycrystalline CuIn0.95Ga0.05Se2 Films

被引：1
|
作者：
Gadzhiev, T. M. [1 ]
Aliev, M. A. [1 ]
Asvarov, A. Sh [1 ,2 ]
Aliev, G. A. [3 ]
Muslimov, A. E. [2 ]
Kanevsky, V. M. [2 ]
机构：
[1] Russian Acad Sci, Dagestan Sci Ctr, Amirkhanov Inst Phys, Makhachkala 367015, Russia
[2] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow 119333, Russia
[3] Dagestan State Tech Univ, Makhachkala 367026, Dagestan Republ, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION | 2019年 / 13卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
selenide; film; electroconductivity; stoichiometry; structure; activation energy; SOLAR-CELLS; ELECTRICAL-PROPERTIES; TRANSPORT;
D O I：
10.1134/S1027451019050288
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Polycrystalline CuIn0.95Ga0.05Se2 films are obtained by a two-step procedure of the controlled selenization of intermetallic CuIn0.95Ga0.05 layers. The effect of the selenization temperature and the selenized intermetallic-film thickness on the structure and electrophysical properties of the formed selenide films is studied. With an increase in the selenization temperature, the degree of imperfection of the polycrystalline films is shown to decrease and the efficiency of Ga incorporation into the crystal lattice is shown to increase. Based on the results of studying the electrophysical properties of synthesized samples, the nature of the microstructure effect on the current-transfer mechanisms in polycrystalline CuIn0.95Ga0.05Se2 films is discussed.
引用
收藏
页码：950 / 954
页数：5
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