Determination of deformation potential constants for n- and p-Si from the concentration anharmonicity

被引：6
|
作者：
Skvortsov, AA [1 ]
Litvinenko, OV [1 ]
Orlov, AM [1 ]
机构：
[1] IN Ulyanov State Univ, Ulaynovsk 432700, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 01期
关键词：
Silicon; Charge Carrier; Conduction Band; Magnetic Material; Valence Band;
D O I：
10.1134/1.1538532
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The contribution of charge carriers to the fourth-order modulus of elasticity beta for n- and p-type silicon under uniaxial tension along the [110] direction was analyzed in the approximation of small strains. The effect of concentration on beta was measured using spontaneous excitation of Lamb waves in bent plates with different doping levels. Experimental curves were used to determine the deformation potential constants of the conduction band Xi(u) = 7 +/- 1 eV and the averaged value of the deformation potential of the valence band 4root[Phi(4)] = 5.6 +/- 0.8 eV at room temperature. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：15 / 19
页数：5
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