SEMICONDUCTOR MATERIALS FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS

被引：3

作者：

Krotkus, A. ^{[1
]}

Bertulis, K. ^{[1
]}

Adomavicius, R. ^{[1
]}

Pacebutas, V. ^{[1
]}

Geizutis, A. ^{[1
,2
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Vilnius Gediminas Tech Univ, Dept Elect Syst, LT-03227 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 04期

关键词：

THz time domain spectroscopy; low temperature grown GaAs; low temperature grown GaBiAs; photoconductor antenna; MOLECULAR-BEAM EPITAXY; PICOSECOND CARRIER LIFETIME; TERAHERTZ EMISSION; GAAS; RADIATION; INAS; DYNAMICS; SURFACES; ELECTRON; PULSES;

D O I：

10.3952/lithjphys.49407

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoetectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femiosecond laser excited semiconductor surfaces are described and analysed.

引用

页码：359 / 372

页数：14

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