Silicide islands formation during interface reactions of thin films of metallic glasses with Si substrates

被引：0
|
作者：
Rozhanskii, NV
Lifshits, VO
机构：
来源：
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2 | 1996年 / 207-卷
关键词：
TEM; silicides; metallic glasses; thin films;
D O I：
10.4028/www.scientific.net/MSF.207-209.765
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Solid state reactions of thin films of metallic glasses with Si substrates were studied by TEM. It was found that the interaction of films with a substrate proceeds from their amorphous state. Epitaxial islands of silicides are formed before the crystallization temperature(Tcr) of amorphous alloys. The characteristic structure of islands and the study of the kinetics of their growth permitted to obtain some data on diffusion parameters of ''noble'' components (Pd,Ni) in amorphous films of metallic alloys on Si. Some islands were observed to dissolve showing the change of reaction direction.
引用
收藏
页码：765 / 768
页数：4
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