STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces (vol 29, pg 525, 2000)

被引：0
|
作者：
Kohmoto, S [1 ]
Nakamura, H [1 ]
Ishikawa, T [1 ]
Asakawa, K [1 ]
机构：
[1] Femtosecond Technol Res Assoc, FESTA, Tsukuba, Ibaraki 3002635, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 09期
关键词：
D O I：
10.1007/s11664-004-0273-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1110 / 1110
页数：1
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    Kohmoto, S
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    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 525 - 529
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    [J]. Journal of Electronic Materials, 2000, 29 : 1110 - 1110
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    [J]. Journal of Electronic Materials, 2000, 29 : 525 - 529
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (03): : 762 - 765
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    [J]. MATERIALS, 2016, 9 (03):
  • [7] Biexcitons in self-organized InAs/GaAs quantum dots:: an optical probe for structural properties
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    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 1065 - 1069
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    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 35 (02): : 285 - 292
  • [9] Phonon-assisted polar exciton transitions in self-organized InAs/GaAs quantum dots
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  • [10] Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
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    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3488 - 3490
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