Unique Unilateral-Chelated Mode-Induced d-p-π Interaction Enhances Second-Harmonic Generation Response in New Ln3LiMS7 Family

被引:29
|
作者
Yang, Ya [1 ]
Chu, Yu [2 ]
Zhang, Bingbing [1 ]
Wu, Kui [1 ]
Pan, Shilie [2 ]
机构
[1] Hebei Univ, Coll Chem & Environm Sci, Key Lab Analyt Sci & Technol Hebei Prov, Key Lab Med Chem & Mol Diag,Minist Educ, Baoding 071002, Peoples R China
[2] Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, CAS Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
基金
中国国家自然科学基金;
关键词
NONLINEAR-OPTICAL MATERIALS; METAL CHALCOGENIDES; MID-IR; CRYSTALS; SN; GE; SEMICONDUCTORS; RE=LA; SE; RE;
D O I
10.1021/acs.chemmater.1c01133
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Multiple chelated configurations of anionic groups offer a great chance to design new nonlinear optical (NLO) materials with excellent performances for infrared (IR) application. In this work, the new polar Ln(3)LiMS(7) (Ln = rare-earth; M = Ge, Sn) family as promising IR NLO candidates were successfully designed and synthesized by the unique close-ring combination between LnS(8) and MS4 ligands. Note that La3LiGeS7 and La3LiSnS7 exhibit the good NLO effects (0.7 vs 1.2 x benchmark AgGaS2) with phase-matching behavior and high laser damage thresholds (6.0 vs 2.5 X AgGaS2), respectively. First-principles calculation indicates that their NLO effects originate from the synergistic effect of intrinsic dipole moments and d-p delocalized-pi electron-induced dipole oscillations in the Ln(3)LiMS(7) family. This result also verifies that unique unilateral-chelated configuration induced d-p-pi interactions are beneficial to improve the NLO performances, which offers us one feasible way (incorporation of Ln-centered ligands into crystal structure) to design new promising IR NLO materials.
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页码:4225 / 4230
页数:6
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