The effect of dopants on the texture formation in MBE-grown polysilicon films

被引：0
|
作者：
Gracheva, TA [1 ]
Malygin, ND [1 ]
Shengurov, DV [1 ]
Shengurov, VG [1 ]
机构：
[1] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603600, Russia
来源：
TECHNICAL PHYSICS | 2000年 / 45卷 / 09期
关键词：
D O I：
10.1134/1.1318112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The texture of polysilicon films as a function of doping impurities and growth temperature was studied. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1212 / 1213
页数：2
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