Field-Plated Lateral β-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

被引：158
|
作者：
Hu, Zhuangzhuang [1 ]
Zhou, Hong [1 ]
Feng, Qian [1 ]
Zhang, Jincheng [1 ]
Zhang, Chunfu [1 ]
Dang, Kui [1 ]
Cai, Yuncong [1 ]
Feng, Zhaoqing [1 ]
Gao, Yangyang [1 ]
Kang, Xuanwu [2 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Field-plate; beta-Ga2O3; sapphire substrate; lateral Schottky barrier diode; power figure of merit; SINGLE-CRYSTALS;
D O I：
10.1109/LED.2018.2868444
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report on demonstrating high-performance field-plated lateral beta-Ga2O3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance (R-ON,R-sp) of 24.3 m Omega.cm(2) at an anode-cathode spacing (L-AC) of 24 mu m. To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm(2) is the highest BV achieved among all the beta-Ga2O3 SBDs. Meanwhile, lateral beta-Ga2O3 SBD with L-AC = 16 mu m also demonstrates a high BV of 2.25 kV and low R-ON,R-sp = 10.2 m Omega.cm(2), yielding a record high dc power FOM of 500 MW/cm(2). Combining with 10(9) high-current ON/OFF ratio, 1.15-eV Schottky barrier height and 1.25 ideality factor, beta-Ga2O3 SBD with field-plate structure shows its great promise for power electronics applications.
引用
收藏
页码：1564 / 1567
页数：4
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