Resonant tunnelling through arrays of nanostructures

被引：1

作者：

Lyanda-Geller, YB ^{[1
]}

Leburton, JP ^{[1
]}

机构：

[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 01期

关键词：

D O I：

10.1088/0268-1242/13/1/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate three-dimensional resonant tunnelling (RT) through a double potential barrier with a periodic modulation of the quantum well in the plane of the layers. Both elastic and phonon-assisted RT through transverse minibands separated by minigaps are considered. By using the Breit-Wigner-like formula for the transmission probability we find a more abrupt upward portion (front) of the current-voltage characteristics and a broader negative differential resistance region than in 'conventional' RT through double barrier heterostructures. Phonon-assisted tunnelling characteristics follow the same trends.

引用

页码：35 / 42

页数：8

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