Phosphorous-doped hydrogenated nano-crystalline silicon film prepared by PECVD

被引：0
|
作者：
Liu, M [1 ]
Wang, Z [1 ]
Pang, YC [1 ]
He, YL [1 ]
Jiang, XL [1 ]
机构：
[1] Beijing Univ Aeronaut & Astronaut, Beijing 100083, Peoples R China
来源：
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷
关键词：
nano-crystalline silicon; phosphorous-doping; conductivity;
D O I：
10.1117/12.300678
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Phosphorous-doped nano-crystalline silicon films have been prepared by plasma enhanced chemical vapor deposition(PECVD) system. Detailed results on dark electrical conductivity, Raman spectra, infrared absorption spectra, hydrogen content are presented The doped sample's grain size and it's volume fraction is little related to doped concentration, whereas, the room-temperature conductivity of doped samples changed as doped concentration increased from 10(-4)10(-1); it's value can reach to maximum value of 3.57 Omega(-1) cm(-1) when PH3/SiH4 = 2 x 10(-2). The conductivity activation energy of doped sample is smaller than that of undoped nc-Si:H film and hydrogen content is about 10-15%, also smaller than that of nc-Si:H film.
引用
收藏
页码：244 / 246
页数：3
相关论文
共 50 条
  • [1] Fabrication and study of phosphor doped hydrogenated nano-crystalline silicon film
    Liu, M
    Wang, ZO
    Xi, ZH
    He, YL
    [J]. ACTA PHYSICA SINICA, 2000, 49 (05) : 983 - 988
  • [2] Fabrication and study of phosphor doped hydrogenated nano-crystalline silicon film
    [J]. 2000, Sci Publ House (49):
  • [3] Properties of amorphous silicon thin film transistors with phosphorous-doped hydrogenated microcrystalline silicon
    Choi, JH
    Kim, CW
    Yang, HG
    Souk, JH
    [J]. ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 907 - 912
  • [4] Study on photoluminescence properties of hydrogenated nano-crystalline silicon film
    Liu, M.
    Fu, D.F.
    He, Y.L.
    Li, G.H.
    Han, H.X.
    [J]. Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics, 2001, 21 (01): : 57 - 62
  • [5] Characterization of hydrogen in hydrogenated nano-crystalline silicon
    Yamamoto, K
    Itoh, T
    Ushikoshi, K
    Nonomura, S
    Nitta, S
    [J]. AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 317 - 322
  • [6] Oxidized characteristics of hydrogenated nano-crystalline silicon
    Liu, M
    Dou, HF
    He, YL
    Jiang, XL
    [J]. THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 456 - 459
  • [7] Electrical transport properties of a diode consisting of hydrogenated nano-crystalline silicon film
    Liu, M
    Dou, HF
    He, YL
    Jiang, XL
    [J]. THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 299 - 301
  • [8] Structure characteristics of phosphorus-doped hydrogenated nano-crystalline silicon films
    Yu, Xiao-Mei
    Wang, Jin-Liang
    Jiang, Xing-Liu
    Wang, Tian-Min
    [J]. Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics, 2002, 28 (05): : 547 - 549
  • [9] Light trapping in hydrogenated amorphous and nano-crystalline silicon thin film solar cells
    Yang, Jeffrey
    Yan, Baojie
    Yue, Guozhen
    Guha, Subhendu
    [J]. AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
  • [10] Properties of Nano-crystalline Silicon-Carbide Films Prepared Using Modulated RF-PECVD
    Zhu, Feng
    Hu, Jian
    Matulionis, Ilvydas
    Kunrath, Augusto
    Madan, Arun
    [J]. AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
12345