High-temperature LDAs Pulsedly Side-pumped Nd:YAG Laser

被引:2
|
作者
Yang Boda [1 ]
Xing Zhengquan [2 ]
Chen Donglin [2 ]
Li Yan [1 ]
Shi Linlin [1 ]
Xu Yingtian [1 ]
Jin Liang [1 ]
Ma Xiaohui [1 ]
机构
[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
[2] Shenyang Army Representat Bur Jilin Area, Army Representat Off, Changchun 130022, Peoples R China
基金
中国国家自然科学基金;
关键词
High-temperature laser diode; Nd: YAG crystal; Pulse pumping; Large energy;
D O I
10.3788/gzxb20215003.0314002
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A compact pulse side-pumped Nd: YAG laser by high-temperature laser diode arrays was designed. The operating temperature of pumping source was controlled at 60 degrees C by the semiconductor refrigerator, the emission center wavelength was 808nm, and the spectral line width was 4.12 nm. Dynamic temperature field distributions of the pumping source in 60s at 40 degrees C, 50 degrees C and 60 degrees C were simulated. Two phi 5 mmx50 mm Nd: YAG crystals with 1.0at.% Nd3+ doping concentration were used as the laser gain medium. The crystal of potassium dideuterium phosphate was used forelectro optic Q switching. With a pump source voltage pulse width of 250 mu s and the repetition frequency of 20 Hz and 1 Hz, output pulsed energy of 230 mJ and 246 mJ were achieved corresponding to the pulse durations of 8.4 ns and 7.8 ns. The beam divergence was 1.6 mrad. The total electro-optical conversion efficiency of designed Nd: YAG Q-switchedlaser was greater than 4.6%.
引用
收藏
页数:7
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