AlGaN/GaN based heterostructures for MEMS and NEMS applications

被引：1
|
作者：
Cimalla, V. [1 ]
Roehlig, C. -C. [1 ]
Lebedev, V. [1 ]
Ambacher, O. [1 ]
Tonisch, K. [2 ]
Niebelschuetz, F. [2 ]
Brueckner, K. [2 ]
Hein, M. [2 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
[2] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98693 Ilmenau, Germany
来源：
NANOSTRUCTURED MATERIALS, THIN FILMS AND HARD COATINGS FOR ADVANCED APPLICATIONS | 2010年 / 159卷
关键词：
Group III Nitrides; Microelectromechanical systems; piezoelectric actuation; resonator; TRANSISTORS; STRAIN; GAS;
D O I：
10.4028/www.scientific.net/SSP.159.27
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of group III-nitrides offer many more possibilities for the implementation of new functionalities and a variety of technologies are available to realize group III-nitride based MEMS. In this work we demonstrate the application of these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation and sensing principle based on the piezoelectric effect and employing a two-dimensional electron gas confined in AlGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation of flexural and longitudinal vibration modes in resonator bridges are demonstrated as well as their sensing properties.
引用
收藏
页码：27 / +
页数：3
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