Thermal Effects in Spin-Torque Switching of Perpendicular Magnetic Tunnel Junctions at Cryogenic Temperatures

被引:8
|
作者
Rehm, L. [1 ]
Wolf, G. [2 ]
Kardasz, B. [2 ]
Cogulu, E. [1 ]
Chen, Y. [1 ]
Pinarbasi, M. [2 ]
Kent, A. D. [1 ]
机构
[1] NYU, Dept Phys, Ctr Quantum Phenomena, New York, NY 10003 USA
[2] Spin Memory Inc, Fremont, CA 94538 USA
关键词
MAGNETORESISTANCE; CONDUCTIVITY;
D O I
10.1103/PhysRevApplied.15.034088
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature plays an important role in spin-torque switching of magnetic tunnel junctions, causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin-torque-switching probability of state-of-the-art perpendicular-magnetic-tunnel-junction nanopillars (40-60 nm in diameter) from room temperature down to 4 K, sampling up to a million switching events. The junction temperature at the switching voltage-obtained from the thermally assisted spin-torque-switching model-saturates at temperatures below about 75 K, showing that junction heating is significant below this temperature and that spin-torque switching remains highly stochastic down to 4 K. A model of heat flow in a nanopillar junction shows this effect is associated with the reduced thermal conductivity and heat capacity of the metals in the junction.
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页数:7
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