Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: FirsACt-principles study

被引：0
|
作者：
Nakayama, T. [1 ,2 ]
Takei, Y. [1 ]
机构：
[1] Chiba Univ, Dept Phys, 1-33 Yayoi, Chiba 2638522, Japan
[2] CREST, Japan Sci & Technol Agcy, Saitama, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期
关键词：
D O I：
10.1002/pssc.200673308
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The energetics and the growth dynamics of InGaN layers on strained InN substrates are studied using the first-principles calculations. It is shown that the diffusion of adsorbed atoms on the surface is suppressed when the grown layers receive the tensile stress from the substrate.and the bonding between adsorbed and surface atoms is weakened. The present results indicate that the surface strain is one of relevant factors to promote InGaN hexagonal/cubic polymorphism in epitaxy. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：259 / +
页数：2
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