Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-target

被引：0

作者：

Kobayashi, J ^{[1
]}

Yonekubo, S ^{[1
]}

Kamimura, K ^{[1
]}

Onuma, Y ^{[1
]}

机构：

[1] PRECIS TECHNOL RES INST NAGANO PREFECTURE,NAGANO 394,JAPAN

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide thin films were prepared by radio frequency (RF) magnetron sputtering using silicon and carbon targets and were also prepared by DC reactive sputtering. Films were evaluated by X-ray diffraction. X-ray photoelectron spectroscopy and van der Pauw method. The diffraction peaks were observed at 2 theta=35.6[degrees] for the samples prepared at substrate temperatures from 500 to 750[degrees C], indicating the growth of SiC (111). The conduction type of SiC thin films was controlled by Al doping.

引用

页码：229 / 232

页数：4

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