Tip-induced gating of molecular levels in carbene-based junctions

被引:13
|
作者
Foti, Giuseppe [1 ]
Vazquez, Hector [1 ]
机构
[1] Acad Sci Czech Republ, Inst Phys, Cukrovarnicka 10, Prague, Czech Republic
关键词
single molecule transport; N-heterocyclic carbene; tip-induced gating; DFT-NEGF; metal-molecule charge rearrangement; SELF-ASSEMBLED MONOLAYERS; N-HETEROCYCLIC CARBENES; ELECTRONIC-STRUCTURES; LENGTH DEPENDENCE; CONDUCTANCE; METAL; TRANSPORT; ALIGNMENT;
D O I
10.1088/0957-4484/27/12/125702
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We study the conductance of N-heterocyclic carbene-based (NHC) molecules on gold by means of first-principles calculations based on density-functional theory and non-equilibrium Green's functions. We consider several tip structures and find a strong dependence of the position of the NHC molecular levels with the atomistic structure of the tip. The position of the lowest unoccupied molecular orbital (LUMO) can change by almost 0.8 eV with tip shape. Through an analysis of the net charge transfer, electron redistribution and work function for each tip structure, we rationalize the LUMO shifts in terms of the sum of the work function and the maximum electrostatic potential arising from charge rearrangement. These differences in the LUMO position, effectively gating the molecular levels, result in large conductance variations. These findings open the way to modulating the conductance of NHC-based molecular circuits through the controlled design of the tip atomistic structure.
引用
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页数:8
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