Graphene opto-electronics and plasmonics for infrared frequencies

被引:0
|
作者
Koppens, Frank H. L. [1 ]
Woessner, A. [1 ]
Badioli, M. [1 ]
Tielrooij, K. J. [1 ]
Gao, Yuanda [2 ]
Navickaite, G. [1 ]
Principi, Alessandro [4 ,5 ]
Alonso-Gonzalez, Pablo [3 ]
Garcia de Abajo, F. J. [1 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [6 ]
Hone, James [2 ]
Polini, Marco [4 ,5 ]
Hillenbrand, Rainer [3 ]
机构
[1] ICFO Inst Ciencies Foton, Mediterranean Technol Pk, Castelldefels 08860, Barcelona, Spain
[2] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[3] CIC NanoGUNE, Donostia San Sebastian 20018, Spain
[4] CNR, Ist Nanosci, NEST, I-56126 Pisa, Italy
[5] Scuola Normale Super Pisa, I-56126 Pisa, Italy
[6] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
HYBRID SYSTEMS; PHOTORESPONSE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here, we present novel aspects of infrared photocurrent and plasmonics in graphene, with a focus on understanding the physical mechanisms of plasmon damping and infrared photovoltage creation [Badioli et al. 2014]. Both far-field and near-field microscopy as well as near-field and far-field photocurrent mapping are used to study the nanoscale interactions between infrared light, hot carriers and plasmon excitations. We report record-high optical field confinement while maintaing relatively high plasmon quality factors (>30) [Woessner et al. 2014].
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页数:3
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