Combined solid phase crystallization and excimer laser annealing process for polysilicon thin-film transistors

Polycrystalline silicon thin-film transistors (TFTs) have been fabricated by using a combined fast solid phase crystallization (SPC) process followed by excimer laser annealing (ELA). The electrical characteristics of the devices, after post-hydrogenation, show average field effect mobilities > 100 cm(2)/Vs and better noise performance, if compared to conventional SPC-polysilicon TFTs. A main advantage of the presented technique is the reduced sensitivity of the device performances to the energy density used during ELA.