Intersubband semiconductor light sources: history, status, and future

被引:0
|
作者
Helm, M [1 ]
机构
[1] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
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D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
After the first theoretical proposal in 1971, it took more than two decades until the first laser based on intersubband transitions in semiconductor quantum structures was demonstrated. The progress since then has indeed been spectacular with lasers now spanning the range from 3.5 to 140 mum. The physics of these devices will be elucidated and some crucial achievements will be highlighted. Finally the perspectives for closing the still existing wavelength gap (25-60 mum) and extending the covered range to even longer as well as shorter wavelength will be discussed.
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页码:57 / 58
页数:2
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