Rapid thermal processing of CIS precursors

被引：4

作者：

Kerr, LL ^{[1
]}

Kim, S ^{[1
]}

Kincal, S ^{[1
]}

Ider, M ^{[1
]}

Yoon, S ^{[1
]}

Anderson, TJ ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190655

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An alternative process for CuInSe2 formation is presented. In this approach, a binary two-layer precursor Cu-Se/In-Se is first deposited on a Mo/glass substrate at low temperature by migration enhanced epitaxy (MEE). when the Se ambient is controlled, rapid thermal processing (RTP) is able to synthesize single phase CuInSe2. The structure, morphology, and composition of the films were characterized by XRD, SEM and ICP.

引用

页码：676 / 679

页数：4

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