Stress-controlled zero-field spin splitting in silicon carbide

被引：13

作者：

Breev, I. D. ^{[1
]}

Poshakinskiy, A., V ^{[1
]}

Yakovleva, V. V. ^{[1
]}

Nagalyuk, S. S. ^{[1
]}

Mokhov, E. N. ^{[1
]}

Huebner, R. ^{[2
]}

Astakhov, G., V ^{[1
,2
]}

Baranov, P. G. ^{[1
]}

Anisimov, A. N. ^{[1
]}

机构：

[1] Ioffe Inst, Politech Skaya St 26, St Petersburg, Russia

[2] Helmholtz Zentrum Dresden Rossendorf HZDR, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 08期

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1063/5.0040936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially resolved confocal Raman spectroscopy. The zero-field spin splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically detected magnetic resonance, reveals significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which is 0.75GHz/strain for the V1/V3 centers and 0.5GHz/strain for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize fine tuning of spin transition energies in SiC by deformation.

引用

页数：5

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