A Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices

In this work, we present a novel full-band Monte Carlo device simulator for modelling 4H-SiC Power electronic devices in which, for the first time, we use real-space molecular dynamics approach for the Coulomb interactions. Proper treatment of the electron-electron interactions is critical for modelling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain the steady-state behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.