Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

被引：0
|
作者：
Kim, KS [1 ]
Hong, CH
Lee, WH
Kim, CS
Cha, OH
Yang, GM
Suh, EK
Lim, KY
Lee, HJ
Cho, HK
Lee, JY
Seo, JM
机构：
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea
[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[4] Chonbuk Natl Univ, Dept Sci & Technol, Chonju 561756, South Korea
来源：
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2000年 / 5卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a (1-102) facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.
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页码：art. no. / W11.74
页数：5
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